•  Boron Nitride Disc,BN Disc High Temp Ceramic,
Boron Nitride Disc Industrial Ceramic,
BN Disc Ceramic Plate
  •  Boron Nitride Disc,BN Disc High Temp Ceramic,
Boron Nitride Disc Industrial Ceramic,
BN Disc Ceramic Plate

 Boron Nitride Disc

No.BN4

Product Name: Boron Nitride Disc

Material: High-Purity Boron Nitride (BN)

Material Characteristics: High thermal stability, excellent dielectric strength, thermal shock resistance, chemical inertness, smooth surface finish

Application Fields: High-temperature insulation, semiconductor wafer processing, diffusion barriers, furnace components

Application Industries: Semiconductor, electronics, research laboratories, metallurgy

Processing Challenges: Ensuring flatness and parallelism, preventing cracking in thin sections, maintaining surface quality

Processing Flow: Powder preparation → Dry pressing → High-temperature sintering → Surface grinding → Quality inspection → Packaging

Delivery Time: 35-50 days for standard discs, 55-70 days for customized dimensions

  •  Boron Nitride Disc,BN Disc High Temp Ceramic,
Boron Nitride Disc Industrial Ceramic,
BN Disc Ceramic Plate

Description

Boron Nitride Discs are precision-machined components specifically engineered for applications demanding excellent dielectric properties and thermal stability. Fabricated from high-purity boron nitride, these discs provide outstanding performance in high-temperature insulation applications, offering superior thermal shock resistance and chemical inertness compared to conventional ceramic materials.

Key Features:

  • High Temperature Capability - Operates reliably at temperatures up to 1800°C in oxidizing atmospheres and 2000°C in inert atmospheres.

  • Excellent Dielectric Properties - Volume resistivity >10¹⁴ Ω·cm and dielectric strength >15 kV/mm ensure reliable electrical insulation.

  • Superior Thermal Shock Resistance - Withstands thermal shocks from 1500°C to room temperature without cracking or performance degradation.

  • Excellent Surface Quality - Achieves surface finish better than Ra 0.8 μm, ensuring optimal performance in semiconductor and electronic applications.

  • Chemical Inertness - Resists attack from most acids, alkalis, and molten metals, maintaining performance in corrosive environments.

  • Precision Flatness - Maintains flatness within 0.025 mm per 25 mm diameter, ensuring perfect sealing and thermal contact.

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