Product Name: Aluminum Nitride Ceramic Heat Sinks
Product Material: High-purity Aluminum Nitride (AlN)
Material Characteristics: High thermal conductivity, excellent electrical insulation, low thermal expansion, high temperature resistance, thermal shock resistance
Application Fields: High-power electronic devices, LED cooling, semiconductor modules, laser equipment, microwave devices
Application Industries: Power electronics, semiconductor manufacturing, telecommunications, aerospace, automotive electronics
Processing Challenges: Thin-wall structure manufacturing, surface flatness control, metallization bonding strength, thermal stress management
Processing Flow: Powder preparation → Forming → High-temperature sintering → Surface grinding → Metallization treatment → Inspection → Packaging
Delivery Time: 25-35 days, 40-50 days for customized designs
Aluminum Nitride Ceramic Heat Sinks are precision-engineered components specifically designed for applications requiring exceptional thermal management performance, reliable operation in high-temperature environments, and outstanding thermal shock resistance. Manufactured from high-purity aluminum nitride ceramic, these heat sinks deliver superior performance in thermal dissipation applications, outperforming traditional materials through their excellent thermal conductivity, electrical insulation properties, and thermal stability.
Key Features:
Exceptional Thermal Conductivity - High thermal conductivity (170-200 W/mK) provides outstanding heat dissipation performance, ensuring efficient thermal management in high-power electronic applications and significantly reducing device operating temperatures.
Excellent Thermal Shock Resistance - Withstands rapid temperature changes exceeding 800°C without cracking or degradation, maintaining structural integrity in applications involving frequent thermal cycling and extreme temperature variations.
Superior Electrical Insulation - High volume resistivity (>10¹⁴ Ω·cm) and dielectric strength (>15 kV/mm) provide reliable electrical isolation while enabling efficient heat transfer, ensuring safe operation in high-voltage power applications.
Matched Thermal Expansion - Low thermal expansion coefficient (4.5×10⁻⁶/K) closely matches that of silicon semiconductors, minimizing thermal stress at critical interfaces and enhancing reliability in power electronic packages.
High Temperature Stability - Withstands continuous operation at temperatures up to 1800°C in inert atmospheres while maintaining excellent mechanical and thermal properties, suitable for extreme temperature environments.
Optimal Surface Characteristics - Achieves superior surface flatness (<10 μm/in) and finish quality, ensuring perfect thermal contact with heat-generating components and maximizing heat transfer efficiency.
