Case of Electrostatic Suction Pads on Ceramic Substrates in Semiconductor Wafer Manufacturing

In the key processes such as lithography and etching in semiconductor manufacturing, the wafers need to be fixed extremely flatly, stably and with precise temperature control. Traditional mechanical fixtures carry risks such as contamination and stress damage. This case presents an example of solving the problem of wafer fixation by using high-purity and high-density aluminum nitride ceramics to manufacture electrostatic suction plate substrates.

Challenge

Improve the consistency and yield of wafer processing

(1) When using traditional vacuum suction cups or mechanical edge fixtures to fix wafers, it may introduce particle contamination, cause backside damage, or affect heat transfer due to uneven contact, resulting in uneven wafer temperature and subsequently impacting the uniformity of lithography or film deposition.

(2) In high-speed rotating or high-power processes, wafers may experience micro-sliding or warping, leading to decreased alignment accuracy and even causing fragments.

Solution

Precise ceramics (alumina nitride) with excellent thermal conductivity, insulation properties and high flatness

The core substrate material of the electrostatic suction pad is high-purity aluminum nitride ceramic. This material has an extremely high thermal conductivity (approximately 170-200 W/mK), ensuring efficient and uniform heat transfer between the wafer s backside and the suction pad. Its excellent insulation property allows for the application of electrostatic force to adsorb the wafer, achieving full backside and stress-free fixation.

Note: The surface of the substrate needs to undergo ultra-precision grinding and electrode processing, with the flatness typically required to be less than 5 micrometers.

Result

Achieving more stable and higher precision in wafer processing

(1) Through electrostatic adsorption, the wafers are uniformly attached to the flat ceramic substrate, eliminating mechanical stress and significantly reducing the risk of fragmentation and backside damage.

(2) Thanks to the excellent thermal conductivity of aluminum nitride ceramics, the heating or cooling of the wafers in the process is more rapid and uniform, greatly improving the consistency of film thickness and etching rate, and ultimately directly enhancing the yield of chip manufacturing.

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